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2N5195G
Bipolar (BJT) Single Transistor, General Purpose, PNP, 80 V, 4 A, 40 W, TO-225, Through Hole
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2207 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$15.760 |
| 10+ | NT$14.620 |
| 100+ | NT$13.650 |
| 500+ | NT$12.680 |
| 1000+ | NT$12.320 |
| 5000+ | NT$12.080 |
價格Each
最少: 1
多項: 1
NT$15.76
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號2N5195G
訂購代碼9556451
技術資料表
Transistor PolarityPNP
Collector Emitter Voltage Max80V
Continuous Collector Current4A
Power Dissipation40W
Transistor Case StyleTO-225
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency2MHz
DC Current Gain hFE Min80hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (25-Jun-2025)
產品總覽
The 2N5195G is a 4A silicon PNP Power Transistor designed for use in power amplifier and switching circuits and offers excellent safe area limits.
- Complement to NPN 2N5191 and 2N5192
應用
Industrial, Power Management
技術規格
Transistor Polarity
PNP
Continuous Collector Current
4A
Transistor Case Style
TO-225
No. of Pins
3Pins
DC Current Gain hFE Min
80hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
80V
Power Dissipation
40W
Transistor Mounting
Through Hole
Transition Frequency
2MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
2N5195G 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.005897