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2N5886G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 25 A, 200 W, TO-204AA, Through Hole
不再生產
產品訊息
製造商ONSEMI
製造商產品編號2N5886G
訂購代碼9556087
Product Range2NXXXX
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Continuous Collector Current25A
Power Dissipation200W
Transistor Case StyleTO-204AA
Transistor MountingThrough Hole
No. of Pins2Pins
Transition Frequency4MHz
DC Current Gain hFE Min4hFE
Operating Temperature Max200°C
Product Range2NXXXX
Qualification-
MSL-
2N5886G 的替代選擇
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產品總覽
The 2N5886G is a 25A NPN high-power complementary Silicon Transistor designed for general-purpose power amplifier and switching applications.
- Low collector-emitter saturation voltage (1VDC maximum VCE(sat) @ 15A DC IC)
- Low leakage current (1mA DC maximum ICEX @ rated voltage)
- Excellent DC current gain (20 minimum hFE @ 10A DC IC)
應用
Industrial, Power Management
技術規格
Transistor Polarity
NPN
Continuous Collector Current
25A
Transistor Case Style
TO-204AA
No. of Pins
2Pins
DC Current Gain hFE Min
4hFE
Product Range
2NXXXX
MSL
-
Collector Emitter Voltage Max
80V
Power Dissipation
200W
Transistor Mounting
Through Hole
Transition Frequency
4MHz
Operating Temperature Max
200°C
Qualification
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：India
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：India
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
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重量 (公斤)：.012021