列印頁面
48,095 有存貨
10,000 即日起您可預購補貨
5367 件可于 1-2 個工作日後配送(新加坡 件庫存)
42728 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$15.570 |
| 10+ | NT$10.590 |
| 100+ | NT$5.420 |
| 500+ | NT$4.990 |
| 1000+ | NT$4.150 |
| 5000+ | NT$4.070 |
價格Each
最少: 5
多項: 5
NT$77.85
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
此數量將會新增至訂單確認、發票、出貨備註、網頁確認電子郵件和產品標籤。
產品訊息
製造商ONSEMI
製造商產品編號2N7000
訂購代碼9845178
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id200mA
Drain Source On State Resistance5ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation400mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
產品總覽
The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed current up to 2A. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
技術規格
Channel Type
N Channel
Continuous Drain Current Id
200mA
Transistor Case Style
TO-92
Rds(on) Test Voltage
10V
Power Dissipation
400mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
2N7000 的替代選擇
找到 8 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000356