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2N7000BU
MOSFET, N-CH, 60V, 0.2A, TO-226AA-3
6,537 有存貨
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6537 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$12.270 |
| 10+ | NT$7.460 |
| 100+ | NT$4.040 |
| 500+ | NT$3.360 |
| 1000+ | NT$2.940 |
| 5000+ | NT$2.820 |
價格Each
最少: 5
多項: 5
NT$61.35
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號2N7000BU
訂購代碼2453761
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id200mA
Drain Source On State Resistance5ohm
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.9V
Power Dissipation400mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The 2N7000BU is an advanced small-signal N-channel enhancement-mode MOSFET produced using high cell density DMOS technology. It minimizes ON-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. It is particularly suited for low-voltage, low-current applications, such as power MOSFET gate drivers and other switching applications.
- Fast switching times
- Improved inductive ruggedness
- Lower input capacitance
- Extended safe operating area
- Improved high-temperature reliability
技術規格
Channel Type
N Channel
Continuous Drain Current Id
200mA
Transistor Case Style
TO-226AA
Rds(on) Test Voltage
10V
Power Dissipation
400mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.9V
No. of Pins
3Pins
Product Range
-
MSL
-
2N7000BU 的替代選擇
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000454