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| 數量 | 價格 |
|---|---|
| 5+ | NT$3.160 |
| 50+ | NT$2.630 |
| 100+ | NT$2.100 |
| 500+ | NT$1.480 |
| 1500+ | NT$1.460 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$15.80
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號2N7002KT1G
訂購代碼2317619
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id380mA
Drain Source On State Resistance1.6ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Power Dissipation420mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The 2N7002KT1G is a N-channel Small Signal MOSFET offers 60V drain source voltage and 320mA steady state drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, portable DSC and PDA applications.
- Low RDS (ON)
- Surface-mount package
- Halogen-free
- ESD Protected
- -55 to 150°C Operating junction temperature range
應用
Portable Devices, Consumer Electronics, Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
380mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
420mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1.6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.3V
No. of Pins
3Pins
Product Range
-
MSL
-
2N7002KT1G 的替代選擇
找到 8 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.009072