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| 數量 | 價格 |
|---|---|
| 5+ | NT$6.850 |
| 50+ | NT$5.630 |
| 100+ | NT$4.410 |
| 500+ | NT$3.070 |
| 1500+ | NT$3.010 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$34.25
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號2N7002W
訂購代碼2453383
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds78V
Continuous Drain Current Id115mA
Drain Source On State Resistance13.5ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.76V
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The 2N7002W is a N-channel enhancement-mode FET with low ON-resistance and low gate threshold voltage.
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Ultra-small surface-mount package
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
115mA
Transistor Case Style
SOT-323
Rds(on) Test Voltage
10V
Power Dissipation
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
78V
Drain Source On State Resistance
13.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.76V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
2N7002W 的替代選擇
找到 1 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.00003