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| 數量 | 價格 |
|---|---|
| 1+ | NT$18.400 |
| 10+ | NT$9.850 |
| 25+ | NT$9.470 |
| 50+ | NT$9.080 |
| 100+ | NT$8.690 |
| 500+ | NT$7.430 |
價格Each
最少: 1
多項: 1
NT$18.40
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品總覽
The 4N35-M is a through hole general purpose phototransistor optocoupler in 6 pin DIP package. This optocoupler consist of gallium arsenide infrared emitting diode driving a silicon photo transistor. The device is mostly suitable for power supply regulators, digital logic inputs and microprocessor inputs.
- Minimum current transfer ratio of 100% at IF=10A, Vce=10V
- Isolation voltage of 4.17KVAC
- Forward current (If) of 60mA
- Single channel
- UL 1577 and DIN-EN IEC60747-5-5 approved
- Operating temperature range from -40°C to 100°C
技術規格
No. of Channels
1 Channel
No. of Pins
6Pins
Isolation Voltage
7.5kV
Collector Emitter Voltage V(br)ceo
30V
SVHC
No SVHC (25-Jun-2025)
Optocoupler Case Style
DIP
Forward Current If Max
60mA
CTR Min
100%
Product Range
-
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Thailand
承擔產品生產最後程序之國家
關稅編號:85414900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤):.002177