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BC546BZL1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 65 V, 100 mA, 625 mW, TO-92, Through Hole
无库存
產品訊息
製造商ONSEMI
製造商產品編號BC546BZL1G复制
訂購代碼9558551
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage Max65V
Continuous Collector Current100mA
Power Dissipation625mW
Transistor Case StyleTO-92
Transistor MountingThrough Hole
No. of Pins3Pins
DC Current Gain hFE Min290hFE
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The BC546BZL1G from On Semiconductor is a through hole, NPN amplifier transistor in TO-92 package.
- Collector to emitter voltage (Vce) of 65V
- Collector current (Ic) of 100mA
- Power dissipation of 625mW
- Operating junction temperature range from -55°C to 150°C
- Collector emitter breakdown Voltage of 65V
- Collector emitter saturation voltage of 600mV at 10mA collector current
應用
Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial
技術規格
Transistor Polarity
NPN
Continuous Collector Current
100mA
Transistor Case Style
TO-92
No. of Pins
3Pins
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage Max
65V
Power Dissipation
625mW
Transistor Mounting
Through Hole
DC Current Gain hFE Min
290hFE
Product Range
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0002