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| 數量 | 價格 |
|---|---|
| 50+ | NT$9.200 |
| 250+ | NT$6.990 |
| 1000+ | NT$5.230 |
| 3000+ | NT$5.130 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 5
NT$920.00
品項附註
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產品訊息
製造商ONSEMI
製造商產品編號BSP52T1G
訂購代碼2317579RL
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo80V
Collector Emitter Voltage Max80V
Power Dissipation Pd1.25W
Continuous Collector Current1A
DC Collector Current1A
Power Dissipation800mW
RF Transistor CaseSOT-223
Transistor Case StyleSOT-223
No. of Pins4Pins
DC Current Gain hFE1000hFE
Transistor MountingSurface Mount
Transition Frequency-
Operating Temperature Max150°C
DC Current Gain hFE Min1000hFE
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BSP52T1G is a NPN bipolar Darlington Transistor designed for use in switching applications such as print hammer, relay, solenoid and lamp drivers. The device is housed in the package which is designed for medium power surface-mount applications. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
- Can be soldered using wave or reflow
- PNP complement is BSP62T1
- AECQ101 qualified and PPAP capable
應用
Industrial, Power Management, Automotive
技術規格
Transistor Polarity
NPN
Collector Emitter Voltage Max
80V
Continuous Collector Current
1A
Power Dissipation
800mW
Transistor Case Style
SOT-223
DC Current Gain hFE
1000hFE
Transition Frequency
-
DC Current Gain hFE Min
1000hFE
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
1.25W
DC Collector Current
1A
RF Transistor Case
SOT-223
No. of Pins
4Pins
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 2 - 1 year
BSP52T1G 的替代選擇
找到 1 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
關稅編號:85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.00012