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產品訊息
製造商ONSEMI
製造商產品編號BUB323ZT4G
訂購代碼1653614RL
技術資料表
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo350V
Collector Emitter Voltage Max350V
Power Dissipation Pd150W
Continuous Collector Current10A
Power Dissipation150W
DC Collector Current10A
RF Transistor CaseTO-263 (D2PAK)
Transistor Case StyleTO-263 (D2PAK)
No. of Pins3Pins
DC Current Gain hFE500hFE
Transition Frequency2MHz
Transistor MountingSurface Mount
DC Current Gain hFE Min500hFE
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BUB323ZT4G is a NPN bipolar silicon power Darlington Transistor with a built-in active Zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as electronic ignition, switching regulators and motor control.
- Planar, monolithic
- Autoprotected
- Integrated high-voltage active clamp
- Tight clamping voltage window
- Clamping energy capability 100% tested in a live ignition circuit
- High DC current gain/low saturation voltages specified over full temperature range
- Design guarantees operation in SOA at all times
應用
Industrial, Power Management, Motor Drive & Control
技術規格
Transistor Polarity
NPN
Collector Emitter Voltage Max
350V
Continuous Collector Current
10A
DC Collector Current
10A
Transistor Case Style
TO-263 (D2PAK)
DC Current Gain hFE
500hFE
Transistor Mounting
Surface Mount
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Collector Emitter Voltage V(br)ceo
350V
Power Dissipation Pd
150W
Power Dissipation
150W
RF Transistor Case
TO-263 (D2PAK)
No. of Pins
3Pins
Transition Frequency
2MHz
DC Current Gain hFE Min
500hFE
Product Range
-
MSL
MSL 1 - Unlimited
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤):.001911