列印頁面
94,785 有存貨
30,000 即日起您可預購補貨
94785 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$52.610 |
| 10+ | NT$23.160 |
| 100+ | NT$20.440 |
| 500+ | NT$18.350 |
| 1000+ | NT$15.750 |
| 5000+ | NT$15.700 |
價格Each
最少: 1
多項: 1
NT$52.61
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號BUZ11-NR4941
訂購代碼2453387
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id30A
Drain Source On State Resistance0.04ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation75W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BUZ11_NR4941 is a 50V N-channel Power MOSFET designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. This product is general usage and suitable for many different applications.
- Nanosecond switching speed
- Linear transfer characteristics
- High input impedance
- 170ns Fall time
應用
Signal Processing, Industrial, Motor Drive & Control
技術規格
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
75W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
50V
Drain Source On State Resistance
0.04ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 1 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.003629