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BVSS123LT1G
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount
36,597 有存貨
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36597 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$13.200 |
| 10+ | NT$7.990 |
| 100+ | NT$5.000 |
| 500+ | NT$3.810 |
| 1000+ | NT$2.550 |
| 5000+ | NT$2.140 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$66.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號BVSS123LT1G
訂購代碼2727944
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id170mA
Drain Source On State Resistance6ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.6V
Power Dissipation225mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
170mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
225mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.6V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
BVSS123LT1G 的替代選擇
找到 8 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00006