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FCD380N60E
Power MOSFET, N Channel, 600 V, 10.2 A, 0.32 ohm, TO-252 (DPAK), Surface Mount
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產品訊息
製造商ONSEMI
製造商產品編號FCD380N60E
訂購代碼2825202
Product RangeSuperFET II
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id10.2A
Drain Source On State Resistance0.32ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation106W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSuperFET II
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
10.2A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
106W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.32ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
SuperFET II
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0004