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| 數量 | 價格 |
|---|---|
| 1+ | NT$68.410 |
| 10+ | NT$63.640 |
| 100+ | NT$58.870 |
| 500+ | NT$56.690 |
| 1000+ | NT$54.510 |
價格Each
最少: 1
多項: 1
NT$68.41
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產品訊息
製造商ONSEMI
製造商產品編號FCPF260N60E
訂購代碼2254240
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id15A
Drain Source On State Resistance0.26ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation36W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FCPF260N60E is a N-channel SuperFET® II easy-drive high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 48nC)
- Low effective output capacitance (Coss.eff = 129pF)
- 100% avalanche tested
應用
Industrial, Power Management, Communications & Networking, Lighting, Alternative Energy, Consumer Electronics
技術規格
Channel Type
N Channel
Continuous Drain Current Id
15A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
36W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.26ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.002