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FDA59N25
Power MOSFET, N Channel, 250 V, 59 A, 0.049 ohm, TO-3P, Through Hole
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2690 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$152.590 |
| 10+ | NT$81.890 |
| 100+ | NT$62.170 |
| 500+ | NT$60.760 |
| 1000+ | NT$59.340 |
價格Each
最少: 1
多項: 1
NT$152.59
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDA59N25
訂購代碼1228352
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id59A
Drain Source On State Resistance0.049ohm
Transistor Case StyleTO-3P
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation392W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDA59N25 is an UniFET™ N-channel MOSFET produced using high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 63nC typical low gate charge
- 70pF typical low Crss
- 100% avalanche tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
59A
Transistor Case Style
TO-3P
Rds(on) Test Voltage
10V
Power Dissipation
392W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.049ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.005