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FDA70N20
Power MOSFET, N Channel, 200 V, 70 A, 0.035 ohm, TO-3P, Through Hole
无库存
產品訊息
製造商ONSEMI
製造商產品編號FDA70N20复制
訂購代碼1228356
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id70A
Drain Source On State Resistance0.035ohm
Transistor Case StyleTO-3P
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation417W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The FDA70N20 is an UniFET™ N-channel MOSFET produced using Fairchild Semiconductor's high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 66nC Typical low gate charge
- 89pF Typical low Crss
- 100% Avalanche tested
應用
Power Management, Consumer Electronics, Lighting
技術規格
Channel Type
N Channel
Continuous Drain Current Id
70A
Transistor Case Style
TO-3P
Rds(on) Test Voltage
10V
Power Dissipation
417W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.035ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.005