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FDB035AN06A0
Power MOSFET, N Channel, 60 V, 80 A, 3500 µohm, TO-263 (D2PAK), Surface Mount
无库存
產品訊息
製造商ONSEMI
製造商產品編號FDB035AN06A0复制
訂購代碼1471026
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id80A
Drain Source On State Resistance3500µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation310W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
FDB035AN06A0 的替代選擇
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產品總覽
The FDB035AN06A0 is a N-channel MOSFET produced using advanced PowerTrench® process. It is suitable for use in synchronous rectification for ATX/server/telecom PSU and battery protection circuit.
- Low miller charge
- Low Qrr body diode
- UIS capability (single pulse and repetitive pulse)
技術規格
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
310W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
3500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.000001