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FDB52N20TM
Power MOSFET, N Channel, 200 V, 52 A, 0.049 ohm, TO-263AB, Surface Mount
3,728 有存貨
800 即日起您可預購補貨
3728 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$108.380 |
| 10+ | NT$77.850 |
| 100+ | NT$55.870 |
| 500+ | NT$45.070 |
| 1000+ | NT$44.170 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$108.38
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產品訊息
製造商ONSEMI
製造商產品編號FDB52N20TM
訂購代碼2453393
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id52A
Drain Source On State Resistance0.049ohm
Transistor Case StyleTO-263AB
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation357W
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The FDB52N20TM is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power and ATX.
- 100% avalanche tested
- 49nC typical low gate charge
- 66pF typical low Crss
技術規格
Channel Type
N Channel
Continuous Drain Current Id
52A
Transistor Case Style
TO-263AB
Rds(on) Test Voltage
10V
Power Dissipation
357W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.049ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
2Pins
Product Range
-
MSL
MSL 1 - Unlimited
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.001312