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FDC3612
Power MOSFET, N Channel, 100 V, 2.6 A, 0.125 ohm, SuperSOT, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDC3612
訂購代碼1700702
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id2.6A
Drain Source On State Resistance0.125ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDC3612 is a N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- Fast switching speed
- 14nC Typical low gate charge
應用
Power Management, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
2.6A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
10V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.125ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.3V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002