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FDC602P
Power MOSFET, P Channel, 20 V, 5.5 A, 0.035 ohm, SuperSOT, Surface Mount
35,630 有存貨
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35630 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$13.170 |
| 500+ | NT$9.100 |
| 1500+ | NT$8.920 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$1,317.00
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僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDC602P
訂購代碼1495223RL
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id5.5A
Drain Source On State Resistance0.035ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDC602P is a 2.5V specified P-channel MOSFET uses a rugged gate version of advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 to 12V). It is suitable for use in battery management, load switch and battery protection applications.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
技術規格
Channel Type
P Channel
Continuous Drain Current Id
5.5A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
4.5V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.035ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDC602P 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000049