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FDC608PZ
Power MOSFET, P Channel, 20 V, 5.8 A, 0.03 ohm, SuperSOT, Surface Mount
17,326 有存貨
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17326 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$8.540 |
| 500+ | NT$6.740 |
| 1500+ | NT$6.610 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$854.00
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產品訊息
製造商ONSEMI
製造商產品編號FDC608PZ
訂購代碼1495225RL
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id5.8A
Drain Source On State Resistance0.03ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDC608PZ is a 2.5V specified P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for battery power, load switching, battery power circuits and DC-to-DC conversion applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
技術規格
Channel Type
P Channel
Continuous Drain Current Id
5.8A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
4.5V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.03ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000046