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FDC6303N
Dual MOSFET, N Channel, 25 V, 680 mA, 0.45 ohm
117,647 有存貨
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117647 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$9.330 |
| 500+ | NT$6.440 |
| 1500+ | NT$6.320 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$933.00
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產品訊息
製造商ONSEMI
製造商產品編號FDC6303N
訂購代碼1467964RL
技術資料表
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds25V
Drain Source Voltage Vds N Channel25V
Continuous Drain Current Id680mA
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.45ohm
Continuous Drain Current Id N Channel680mA
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.45ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max800mV
No. of Pins6Pins
Power Dissipation Pd900mW
Power Dissipation N Channel900mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDC6303N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
- Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
- 8V Gate-source voltage
- 0.68A Continuous drain/output current
- 2A Pulsed drain/output current
應用
Industrial, Power Management
技術規格
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
Continuous Drain Current Id
680mA
On Resistance Rds(on)
0.45ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.45ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
800mV
Power Dissipation Pd
900mW
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
680mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SuperSOT
No. of Pins
6Pins
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000204