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| 數量 | 價格 |
|---|---|
| 100+ | NT$12.110 |
| 500+ | NT$8.430 |
| 1500+ | NT$8.270 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$1,211.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDC6305N
訂購代碼9844805RL
技術資料表
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id2.7A
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel2.7A
On Resistance Rds(on)0.08ohm
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.08ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage4.5V
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max900mV
No. of Pins6Pins
Power Dissipation Pd960mW
Power Dissipation N Channel960mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDC6305N is a dual N-channel low threshold MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is suitable for use with load switch, DC-to-DC converters and motor driving applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
應用
Industrial, Motor Drive & Control, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
2.7A
Continuous Drain Current Id N Channel
2.7A
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.08ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
900mV
Power Dissipation Pd
960mW
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.08ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Transistor Case Style
SuperSOT
No. of Pins
6Pins
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
FDC6305N 的替代選擇
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤):.000163