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FDC6312P
Dual MOSFET, P Channel, 20 V, 2.3 A
產品訊息
製造商ONSEMI
製造商產品編號FDC6312P
訂購代碼1700713
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel2.3A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.115ohm
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel-
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDC6312P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance.
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
- ±8V Gate to source voltage
- -2.3A Continuous drain/output current
- 7A Pulsed drain/output current
應用
Industrial, Power Management
技術規格
Channel Type
P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
2.3A
Drain Source On State Resistance P Channel
0.115ohm
No. of Pins
6Pins
Power Dissipation P Channel
960mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SuperSOT
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
FDC6312P 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000145