列印頁面
7,032 有存貨
需要更多?
7032 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$22.300 |
| 10+ | NT$20.870 |
| 100+ | NT$14.300 |
| 500+ | NT$11.450 |
| 1000+ | NT$10.470 |
| 5000+ | NT$10.350 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$22.30
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDC6318P
訂購代碼1611390
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel12V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel2.5A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.09ohm
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel-
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDC6318P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance.
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
- ±8V Gate to source voltage
- -2.5A Continuous drain/output current
- -7A Pulsed drain/output current
應用
Industrial, Power Management
技術規格
Channel Type
P Channel
Drain Source Voltage Vds P Channel
12V
Continuous Drain Current Id P Channel
2.5A
Drain Source On State Resistance P Channel
0.09ohm
No. of Pins
6Pins
Power Dissipation P Channel
960mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SuperSOT
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
相關產品
找到 1 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.0001