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FDC638P
Power MOSFET, P Channel, 20 V, 4.5 A, 0.048 ohm, SuperSOT, Surface Mount
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2849 件可于 1-2 個工作日後配送(新加坡 件庫存)
38506 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$20.930 |
| 50+ | NT$17.570 |
| 100+ | NT$14.210 |
| 500+ | NT$11.940 |
| 1500+ | NT$11.710 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$104.65
品項附註
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產品訊息
製造商ONSEMI
製造商產品編號FDC638P
訂購代碼9846433
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.5A
Drain Source On State Resistance0.048ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage12V
Gate Source Threshold Voltage Max800mV
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDC638P is a 2.5V specified P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for battery power, load switching, battery charging circuits and DC-to-DC conversion applications.
- High performance Trench technology for extremely low RDS (ON)
- 10nC typical low gate charge
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
4.5A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
12V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.048ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
800mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDC638P 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000134