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FDC653N
Power MOSFET, N Channel, 30 V, 5 A, 0.035 ohm, SuperSOT, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDC653N
訂購代碼1467969
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5A
Drain Source On State Resistance0.035ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDC653N is a N-channel enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is tailored to minimize ON-state resistance. It is particularly suited for low voltage applications in PCMICA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount package.
- High density cell design for extremely low RDS (ON)
- Exceptional ON-resistance and maximum DC current capability
技術規格
Channel Type
N Channel
Continuous Drain Current Id
5A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
10V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.035ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDC653N 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000111