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FDC658AP
MOSFET, P, SMD, SSOT-6
71,096 有存貨
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30175 件可于 1-2 個工作日後配送(新加坡 件庫存)
40921 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$16.880 |
| 50+ | NT$14.050 |
| 100+ | NT$11.220 |
| 500+ | NT$7.770 |
| 1500+ | NT$7.620 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$84.40
品項附註
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產品訊息
製造商ONSEMI
製造商產品編號FDC658AP
訂購代碼1495228
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id4A
Drain Source On State Resistance0.05ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDC658AP is a logic level single P-channel MOSFET produced using advanced PowerTrench® process. It has been optimized for battery power management, load switch and DC-to-DC conversion applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
技術規格
Channel Type
P Channel
Continuous Drain Current Id
4A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
10V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.05ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
6Pins
Product Range
-
MSL
-
FDC658AP 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000129