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FDD86102
Power MOSFET, N Channel, 100 V, 36 A, 0.019 ohm, TO-252 (DPAK), Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDD86102
訂購代碼2083234
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id36A
Drain Source On State Resistance0.019ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.1V
Power Dissipation62W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The FDD86102 is a N-channel MOSFET produced using advanced PowerTrench® process.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- Very low Qg and Qgd compared to competing Trench technologies
- Fast switching speed
- 100% UIL tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
36A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
62W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.019ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDD86102 的替代選擇
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原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.0003