需要更多?
| 數量 | 價格 |
|---|---|
| 5+ | NT$74.330 |
| 50+ | NT$63.150 |
| 100+ | NT$51.960 |
| 500+ | NT$45.060 |
| 1000+ | NT$44.740 |
產品訊息
產品總覽
The FDD86110 is a 100V N-channel shielded gate PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- Shielded gate MOSFET technology
- 100% UIL tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
N Channel
50A
TO-252 (DPAK)
10V
127W
150°C
-
Lead (25-Jun-2025)
100V
0.0102ohm
Surface Mount
2.8V
3Pins
-
MSL 1 - Unlimited
FDD86110 的替代選擇
找到 1 個產品
相關產品
找到 3 個產品
法規與環境保護
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證