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FDD86252
Power MOSFET, N Channel, 150 V, 27 A, 0.052 ohm, TO-252 (DPAK), Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDD86252
訂購代碼2083238
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id27A
Drain Source On State Resistance0.052ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.1V
Power Dissipation89W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
產品總覽
The FDD86252 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
- Shielded gate MOSFET technology
- 100% UIL tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
27A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
89W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.052ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDD86252 的替代選擇
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原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.0003