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FDD8880
Power MOSFET, N Channel, 30 V, 58 A, 9000 µohm, TO-252AA, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDD8880
訂購代碼2453402
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id58A
Drain Source On State Resistance9000µohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation55W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The FDD8880 is a N-channel MOSFET produced using proprietary PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
- High performance Trench technology for extremely low RDS (ON)
- Low gate charge
- High power and current handing capability
技術規格
Channel Type
N Channel
Continuous Drain Current Id
58A
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation
55W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
9000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDD8880 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.00068