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FQPF30N06L
Power MOSFET, N Channel, 60 V, 22.5 A, 0.035 ohm, TO-220F, Through Hole
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不再生產
產品訊息
製造商ONSEMI
製造商產品編號FQPF30N06L复制
訂購代碼3003937
Product RangeQFET
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id22.5A
Drain Source On State Resistance0.035ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation38W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeQFET
Qualification-
SVHCNo SVHC (15-Jan-2018)
FQPF30N06L 的替代選擇
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附註
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
22.5A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
38W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.035ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
QFET
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85413000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (15-Jan-2018)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0005