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FDG330P...
Power MOSFET, P Channel, 12 V, 2 A, 0.11 ohm, SC-70, Surface Mount
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不再生產
包裝選項
產品訊息
製造商ONSEMI
製造商產品編號FDG330P...复制
訂購代碼
複捲式1495187RL
條帶式包裝1495187
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id2A
Drain Source On State Resistance0.11ohm
Transistor Case StyleSC-70
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation750mW
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
The FDG330P is a 1.8V specified P-channel MOSFET produced using Fairchild's advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- Compact industry standard surface-mount package
應用
Power Management, Industrial
技術規格
Channel Type
P Channel
Continuous Drain Current Id
2A
Transistor Case Style
SC-70
Rds(on) Test Voltage
4.5V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.11ohm
Transistor Mounting
Surface Mount
Power Dissipation
750mW
Operating Temperature Max
150°C
Qualification
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000033