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FDG6303N
Dual MOSFET, N Channel, 25 V, 500 mA, 0.34 ohm
產品訊息
製造商ONSEMI
製造商產品編號FDG6303N
訂購代碼1611233RL
技術資料表
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds25V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id500mA
On Resistance Rds(on)0.34ohm
Continuous Drain Current Id N Channel500mA
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.34ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage4.5V
Transistor Case StyleSC-70
Gate Source Threshold Voltage Max800mV
No. of Pins6Pins
Power Dissipation Pd300mW
Power Dissipation N Channel300mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDG6303N is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <lt/>1.5V)
- Gate-source Zener for ESD ruggedness
- Compact industry standard surface-mount-package
- -0.5 to 8V Gate to source voltage
- 0.5A Continuous drain/output current
- 1.5A Pulsed drain/output current
應用
Industrial, Power Management
技術規格
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.34ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.34ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
800mV
Power Dissipation Pd
300mW
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
25V
Continuous Drain Current Id
500mA
Continuous Drain Current Id N Channel
500mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Transistor Case Style
SC-70
No. of Pins
6Pins
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.009798