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FDMA291P
Power MOSFET, P Channel, 20 V, 6.6 A, 0.042 ohm, µFET, Surface Mount
可供訂購
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| 數量 | 價格 |
|---|---|
| 5+ | NT$17.140 |
| 50+ | NT$14.220 |
| 100+ | NT$11.290 |
| 500+ | NT$7.800 |
| 1500+ | NT$7.650 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$85.70
品項附註
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產品訊息
製造商ONSEMI
製造商產品編號FDMA291P
訂購代碼1324794
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id6.6A
Drain Source On State Resistance0.042ohm
Transistor Case StyleµFET
Transistor MountingSurface Mount
Rds(on) Test Voltage700mV
Gate Source Threshold Voltage Max700mV
Power Dissipation2.4W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDMA291P is a 1.8V specified single P-channel MOSFET produced using PowerTrench® process. It is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low ON-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
- Halogen-free
技術規格
Channel Type
P Channel
Continuous Drain Current Id
6.6A
Transistor Case Style
µFET
Rds(on) Test Voltage
700mV
Power Dissipation
2.4W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.042ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
700mV
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0005