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3,000 即日起您可預購補貨
409 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$50.320 |
| 10+ | NT$45.060 |
| 100+ | NT$33.560 |
| 500+ | NT$27.300 |
| 1000+ | NT$22.300 |
| 5000+ | NT$21.950 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$50.32
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDMC2523P
訂購代碼1324795
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id3A
Drain Source On State Resistance1.5ohm
Transistor Case StylePower 33
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.8V
Power Dissipation42W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDMC2523P is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is well suited for low voltage applications such as audio amplifier and high efficiency switching DC-to-DC converters.
- Fast switching
- Improved dV/dt capability
- 6.2nC typical low gate charge
- 10pF typical low Crss
技術規格
Channel Type
P Channel
Continuous Drain Current Id
3A
Transistor Case Style
Power 33
Rds(on) Test Voltage
10V
Power Dissipation
42W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
1.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.8V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Thailand
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000049