列印頁面
FDMC4435BZ
Power MOSFET, P Channel, 30 V, 18 A, 0.015 ohm, MLP, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDMC4435BZ
訂購代碼2323179
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id18A
Drain Source On State Resistance0.015ohm
Transistor Case StyleMLP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Power Dissipation31W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
產品總覽
The FDMC4435BZ is a P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for load switching applications common in portable battery packs.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- 100% UIL tested
- 7kV typical HBM ESD protection level
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
18A
Transistor Case Style
MLP
Rds(on) Test Voltage
10V
Power Dissipation
31W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.015ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.9V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDMC4435BZ 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000149