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FDMS86104
Power MOSFET, N Channel, 100 V, 16 A, 0.024 ohm, Power 56, Surface Mount
5,690 有存貨
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5690 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$60.840 |
| 50+ | NT$52.460 |
| 100+ | NT$44.080 |
| 500+ | NT$39.140 |
| 1500+ | NT$38.360 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$304.20
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDMS86104
訂購代碼2083314
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id16A
Drain Source On State Resistance0.024ohm
Transistor Case StylePower 56
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.9V
Power Dissipation73W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The FDMS86104 is a N-channel MOSFET is produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
- Shielded gate MOSFET technology
- Advanced package and silicon combination for low RDS (ON) and high efficiency
- MSL1 Robust package design
- 100% UIL tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
16A
Transistor Case Style
Power 56
Rds(on) Test Voltage
10V
Power Dissipation
73W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.9V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.003