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FDMS86201
Power MOSFET, N Channel, 120 V, 35 A, 9600 µohm, Power 56, Surface Mount
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5 件可于 1-2 個工作日後配送(新加坡 件庫存)
6605 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$55.810 |
| 10+ | NT$36.440 |
| 100+ | NT$34.290 |
價格Each
最少: 1
多項: 1
NT$55.81
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDMS86201
訂購代碼2083317
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id35A
Drain Source On State Resistance9600µohm
Transistor Case StylePower 56
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.6V
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
The FDMS86201 is a N-channel MOSFET is produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
- Shielded gate MOSFET technology
- Advanced package and silicon combination for low RDS (ON) and high efficiency
- MSL1 Robust package design
- 100% UIL tested
技術規格
Channel Type
N Channel
Continuous Drain Current Id
35A
Transistor Case Style
Power 56
Rds(on) Test Voltage
10V
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
120V
Drain Source On State Resistance
9600µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.6V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000132