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FDN306P
MOSFET, P, SMD, SSOT-3
40,220 有存貨
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40220 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$11.680 |
| 50+ | NT$9.760 |
| 100+ | NT$7.840 |
| 500+ | NT$5.460 |
| 1500+ | NT$5.360 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$58.40
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDN306P
訂購代碼1471047
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id2.6A
Drain Source On State Resistance0.04ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDN306P is a P-channel 1.8V specified MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.
- Fast switching
- High performance trench technology for extremely low RDS
應用
Power Management
技術規格
Channel Type
P Channel
Continuous Drain Current Id
2.6A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
4.5V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.04ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
3Pins
Product Range
-
MSL
-
FDN306P 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001