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FDN358P
MOSFET, P, SOT-23
25,105 有存貨
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25105 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$14.140 |
| 50+ | NT$11.890 |
| 100+ | NT$9.630 |
| 500+ | NT$6.770 |
| 1500+ | NT$6.640 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$70.70
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDN358P
訂購代碼9846328
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id1.6A
Drain Source On State Resistance0.125ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Power Dissipation560mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDN358P is a P-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power version of industry standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. It is well suited for load switching, battery charging circuits and DC-to-DC conversion application.
- High performance Trench technology for extremely low RDS (ON)
- 4nC typical low gate charge
技術規格
Channel Type
P Channel
Continuous Drain Current Id
1.6A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
560mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.125ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.9V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
FDN358P 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000033