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FDP33N25
Power MOSFET, N Channel, 250 V, 33 A, 0.094 ohm, TO-220, Through Hole
2,010 有存貨
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2010 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$82.740 |
| 10+ | NT$41.210 |
| 100+ | NT$37.610 |
| 500+ | NT$35.330 |
| 1000+ | NT$33.040 |
價格Each
最少: 1
多項: 1
NT$82.74
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDP33N25
訂購代碼1324798
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id33A
Drain Source On State Resistance0.094ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation235W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (25-Jun-2025)
產品總覽
The FDP33N25 is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 100% avalanche tested
- 36.8nC typical low gate charge
- 39pF typical low Crss
技術規格
Channel Type
N Channel
Continuous Drain Current Id
33A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
235W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.094ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
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重量 (公斤)：.002