列印頁面
FDPF18N50
MOSFET, N-CH, 500V, 18A, TO-220F-3
924 有存貨
需要更多？
924 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$120.040 |
| 10+ | NT$53.280 |
| 100+ | NT$51.310 |
| 500+ | NT$50.320 |
| 1000+ | NT$50.310 |
價格Each
最少: 1
多項: 1
NT$120.04
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDPF18N50
訂購代碼2453861
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id18A
Drain Source On State Resistance0.265ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation38.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDPF18N50 is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 100% Avalanche tested
- 45nC Typical low gate charge
- 25pF Typical low Crss
應用
Power Management, Consumer Electronics, Lighting
技術規格
Channel Type
N Channel
Continuous Drain Current Id
18A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
38.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.265ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
FDPF18N50 的替代選擇
找到 1 個產品
相關產品
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00227