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FDPF33N25T
Power MOSFET, N Channel, 250 V, 33 A, 0.094 ohm, TO-220F, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$103.010 |
| 10+ | NT$43.180 |
| 100+ | NT$39.580 |
| 500+ | NT$37.610 |
| 1000+ | NT$36.860 |
價格Each
最少: 1
多項: 1
NT$103.01
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDPF33N25T
訂購代碼1324807
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id33A
Drain Source On State Resistance0.094ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation94W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDPF33N25T is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 100% Avalanche tested
- 36.8nC Typical low gate charge
- 39pF Typical low Crss
應用
Power Management, Consumer Electronics, Lighting
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
33A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
94W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.094ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.002