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FDS3692
Power MOSFET, N Channel, 100 V, 4.5 A, 0.06 ohm, SOIC, Surface Mount
3,962 有存貨
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3962 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$48.450 | NT$48.45 |
| 總計 價格 | NT$48.45 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$48.450 |
| 10+ | NT$33.440 |
| 100+ | NT$22.910 |
| 500+ | NT$18.440 |
| 1000+ | NT$15.630 |
| 5000+ | NT$15.440 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDS3692
訂購代碼
複捲式1076351RL
條帶式包裝1076351
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id4.5A
Drain Source On State Resistance0.06ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDS3692 is a discrete commercial UltraFET N-channel MOSFET produced using PowerTrench® process. It is suitable for DC-to-DC converters and off-line UPS, distributed power architectures and VRMs, primary switch for 24 and 48V systems, high voltage synchronous rectifier, electronic valve train systems and direct injection/diesel injection systems.
- Low miller charge
- Low QRR body diode
- Optimized efficiency at high frequencies
- UIS Capability (single pulse and repetitive pulse)
- Formerly developmental type 82745
技術規格
Channel Type
N Channel
Continuous Drain Current Id
4.5A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.06ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000242