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FDS4559
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 4.5 A, 4.5 A, 0.055 ohm
產品訊息
製造商ONSEMI
製造商產品編號FDS4559
訂購代碼1471052
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel4.5A
Drain Source On State Resistance N Channel0.055ohm
Drain Source On State Resistance P Channel0.055ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
產品總覽
The FDS4559 is a complementary MOSFET device is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for LCD backlight inverter.
應用
Power Management
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance P Channel
0.055ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
4.5A
Drain Source On State Resistance N Channel
0.055ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
FDS4559 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.000209