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FDS4672A
Power MOSFET, N Channel, 40 V, 11 A, 0.01 ohm, SOIC, Surface Mount
278 有存貨
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278 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$40.460 | NT$40.46 |
| 總計 價格 | NT$40.46 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$40.460 |
| 10+ | NT$25.500 |
| 100+ | NT$16.810 |
| 500+ | NT$13.070 |
| 1000+ | NT$10.530 |
| 5000+ | NT$10.130 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FDS4672A
訂購代碼
複捲式2453418RL
條帶式包裝2453418
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id11A
Drain Source On State Resistance0.01ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.2V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDS4672A is a N-channel MOSFET produced using PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- 35nC typical low gate charge
技術規格
Channel Type
N Channel
Continuous Drain Current Id
11A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
2.5W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.01ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000187