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FDS4675
Power MOSFET, P Channel, 40 V, 11 A, 0.013 ohm, SOIC, Surface Mount
產品訊息
製造商ONSEMI
製造商產品編號FDS4675
訂購代碼1471054
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id11A
Drain Source On State Resistance0.013ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.4V
Power Dissipation2.4W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The FDS4675 is a P-channel MOSFET produced using rugged gate version of advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (4.5 to 20V). It is suitable for load switch and battery protection application.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High current and power handling capability
技術規格
Channel Type
P Channel
Continuous Drain Current Id
11A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.4W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.013ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.4V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000212