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FDS5680
Power MOSFET, N Channel, 60 V, 8 A, 0.02 ohm, SOIC, Surface Mount
不再生產
產品訊息
製造商ONSEMI
製造商產品編號FDS5680
訂購代碼9845232
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id8A
Drain Source On State Resistance0.02ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (17-Jan-2022)
FDS5680 的替代選擇
找到 1 個產品
產品總覽
The FDS5680 is a N-channel Logic Level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High power and current handing capability
- 30nC typical low gate charge
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
8A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2022)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.02ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2022)
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產品合規憑證
重量 (公斤)：.000224